TSMF3700 document number 81032 rev. 1.4, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8553 high speed infrared emitting diode, 870 nm, gaalas double hetero description TSMF3700 is a high speed infrared emitting diode in gaalas on gaalas double hetero (dh) technology in a miniature pl-cc-2 smd package. it has been designed to meet the increasing demand on optoelectronic devices for surface mounting. the package consists of a lead frame which is sur- rounded with a white thermoplast. the reflector inside the package is filled up with clear epoxy. features ? smt ired with extra high radiant power low forward voltage compatible with automatic placement equipment eia and ice standard package suitable for infrared, vapor phase and wavesolder process available in 8 mm tape suitable for pulse current operation extra wide angle of half intensity ? = 60 peak wavelength p = 870 nm high reliability lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications infrared source in tactile keyboards ir diode in low space applications high performance pcb mounted infrared sensors high power infrared emitter for miniature light barriers absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 si fm 200 ma surge forward current t p = 100 si fsm 1a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 10 sec t sd 260 c thermal resistance junction/ ambient r thja 450 k/w
www.vishay.com 2 document number 81032 rev. 1.4, 08-mar-05 TSMF3700 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.4 1.7 v i f = 1 a, t p = 100 sv f 2.4 v temp. coefficient of v f i f = 100 ma tk vf - 1.7 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 160 pf parameter test condition symbol min ty p. max unit radiant intensity i f = 100 ma, t p = 20 ms i e 5725mw/sr i f = 1 a, t p = 100 si e 60 mw/sr radiant power i f = 100 ma, t p = 20 ms e 32 mw temp. coefficient of e i f = 100 ma tk e - 0.8 %/k angle of half intensity ? 60 deg peak wavelength i f = 100 ma p 870 nm spectral bandwidth i f = 100 ma ? 40 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 30 ns fall time i f = 100 ma t f 30 ns virtual source diameter ? 0.5 mm figure 1. power dissipatio n vs. ambient temperature 0 50 100 150 200 250 p - power dissipation ( mw ) v 94 8029 r thja t amb - ambient temperature ( c) 100 80 60 40 20 0 figure 2.forwardcurrents.ambienttemperature 0 25 50 75 100 125 94 7916 r thja t amb - ambient temperature ( c) 100 80 60 40 20 0 f i - forward current ( ma )
TSMF3700 document number 81032 rev. 1.4, 08-mar-05 vishay semiconductors www.vishay.com 3 figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage figure 5. relative forward voltage vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 9985 i - forward current ( ma ) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb <60 c v f - forward voltag e(v) 94 8880 10 1 10 0 10 2 10 3 10 4 i - forward current ( ma) f 4 3 2 1 0 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 figure 6.radiantinten itv.forwardcurrent figure 7.radiantowerv.forwardcurrent figure 8.rel.radiantintenitowerv.ambienttemperature i f - forward current ( ma ) 15903 10 3 10 1 10 2 10 4 10 0 0.1 1 10 100 i - radiant intensity ( mw/sr ) e - radiant power ( mw ) e i f - forward current ( ma ) 15902 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i; e rel e rel 140 94 7993 i f =20ma t amb - ambient temperature ( c)
www.vishay.com 4 document number 81032 rev. 1.4, 08-mar-05 TSMF3700 vishay semiconductors package dimensions in mm figure 9. relative radiant power vs. wavelength 820 870 0 0.25 0.5 0.75 1.0 1.25 920 15821 i f = 100 ma - relative radiant power e rel - wavelength ( nm ) 0.4 0.2 0 0.2 0.4 i - relative radiant intensity e rel 0.6 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
TSMF3700 document number 81032 rev. 1.4, 08-mar-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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